Common point defects in as-grown ZnO substrates studied by optical detection of magnetic resonance

Defects in as-grown commercial zinc oxide (ZnO) substrates were studied by photoluminescence and optical detection of magnetic resonance (ODMR). In addition to the Zn vacancy and shallow donor centers, we observed several ODMR centers with spin S=1/2, labeled LU1–LU4. Among these, the axial LU3 and...

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Bibliographic Details
Published in:Journal of crystal growth 2008-03, Vol.310 (5), p.1006-1009
Main Authors: Son, N.T., Ivanov, I.G., Kuznetsov, A., Svensson, B.G., Zhao, Q.X., Willander, M., Morishita, M.N., Ohshima, T., Itoh, H., Isoya, J., Janzén, E., Yakimova, R.
Format: Article
Language:English
Subjects:
A1. Characterization
A1. Point defects
Applied sciences
B1. Zinc compounds
B2. Semiconducting II–VI materials
Condensed matter: structure, mechanical and thermal properties
Electronics
Electrons and positron radiation effects
Exact sciences and technology
Materials
Physical radiation effects, radiation damage
Physics
Structure of solids and liquids
crystallography
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Summary:Defects in as-grown commercial zinc oxide (ZnO) substrates were studied by photoluminescence and optical detection of magnetic resonance (ODMR). In addition to the Zn vacancy and shallow donor centers, we observed several ODMR centers with spin S=1/2, labeled LU1–LU4. Among these, the axial LU3 and non-axial LU4 centers were detected in all studied samples. The ODMR signals of LU3/LU4 were found to be drastically increased after electron irradiation. The preliminary result indicates that these common ODMR centers in as-grown ZnO are related to intrinsic defects.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2007.11.144