Fabrication of SiO2 nano-dots by block copolymer lithography and liquid phase deposition

Block copolymer thin films have been used as templates for the nanopatterning of metallic or semiconducting materials. We demonstrated less than 50nm nano-dots and successfully reproduced by the novel method using the block copolymer lithography technique and liquid phase deposition (LPD). To fabric...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2008-02, Vol.147 (2-3), p.209-212
Main Authors: Lee, Kyoung Nam, Kim, Kyoung Seob, Kim, Nam-Hoon, Roh, Yonghan
Format: Article
Language:English
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Summary:Block copolymer thin films have been used as templates for the nanopatterning of metallic or semiconducting materials. We demonstrated less than 50nm nano-dots and successfully reproduced by the novel method using the block copolymer lithography technique and liquid phase deposition (LPD). To fabricate nanoporous films, polystyrene-block-polymethyl methacrylate (PS-b-PMMA) copolymer was used in the optimized process condition because PS-b-PMMA had nanostructures with below tens of nanometer-size. LPD process made possible to deposit silicon dioxide (SiO2) under 50 deg C without thermal and plasma damages to the polymer. These methods significantly simplify the generation of 80nm-height SiO2 nano-dots with high densities over a large area.
ISSN:0921-5107
DOI:10.1016/j.mseb.2007.08.026