Loading…

Enhanced field emission from LaB6 thin films with nanoprotrusions grown by pulsed laser deposition on Zr foil

Lanthanum hexaboride (LaB6) films have been deposited on a zirconium foil by pulsed laser deposition method. The field emission studies of the LaB6 deposited film have been performed in the planar diode configuration under ultra high vacuum conditions. The Fowler-Nordheim plots were found to be line...

Full description

Saved in:
Bibliographic Details
Published in:Applied surface science 2008-03, Vol.254 (11), p.3601-3605
Main Authors: LATE, Dattatray J, DATE, Kalyani S, MORE, Mahendra A, MISRA, Pankaj, SINGH, B. N, KUKREJA, Lalit M, DHARMADHIKARI, C. V, JOAG, Dilip S
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Lanthanum hexaboride (LaB6) films have been deposited on a zirconium foil by pulsed laser deposition method. The field emission studies of the LaB6 deposited film have been performed in the planar diode configuration under ultra high vacuum conditions. The Fowler-Nordheim plots were found to be linear in accordance with the quantum mechanical tunneling phenomenon. A typical field emission current of 7.02muA was drawn at an applied electric field of 2V/mum. The field enhancement factor is calculated to be 8913cm-1, indicating that the field emission is from nanoscale protrusions present on the emitter surface. The atomic force microscope (AFM) investigation of the surface clearly shows the conical shaped nanoprotrusions of few hundred nanometers with asperities of 20-40nm on its top. The emission current-time plot recorded at the pre-set value of emission current of 5muA over a period of more than 3h exhibits an initial increase and subsequent stabilization of the current. The results reveal that the LaB6/Zr field emitter obtained by the pulsed laser deposition (PLD) is a promising cathode material for practical applications in field emission-based devices.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2007.11.015