Investigations of porous InP properties by XRD, IR, USXES, XANES and PL techniques

The work is concerned with complex investigations of the layers of porous indium phosphide (por-InP) using X-ray diffraction and IR-spectroscopy, ultrasoft X-ray emission spectroscopy (USXES), spectroscopy of X-ray near-edge absorption fine structure XANES (X-ray absorption near-edge structure) and...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2008-02, Vol.147 (2), p.144-147
Main Authors: Domashevskaya, E.P., Kashkarov, V.M., Seredin, P.V., Terekhov, V.A., Turishchev, S.Yu, Arsentyev, I.N., Ulin, V.P.
Format: Article
Language:English
Subjects:
Indium phosphide
Infrared spectroscopy
Surface structure
X-ray spectroscopy
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Summary:The work is concerned with complex investigations of the layers of porous indium phosphide (por-InP) using X-ray diffraction and IR-spectroscopy, ultrasoft X-ray emission spectroscopy (USXES), spectroscopy of X-ray near-edge absorption fine structure XANES (X-ray absorption near-edge structure) and photoluminescence, obtained by anodic pulse electrochemical etching of single-crystalline plates of InP(1 0 0) of n-type conductivity ( n ∼ 10 18). The data obtained as a result of this work demonstrated that the surface layers of por-InP have cluster structure with the formation of InP quasi-molecules.
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2007.08.029