Scaling limits and MHz operation in thiophene-based field-effect transistors

To achieve high performance organic field effect transistors (OFETs) with enhanced currents, high switching speeds and improved integration density the channel length L is downscaled to the sub‐micrometer regime. The influence of important scaling parameters on the electrical performance of bottom c...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2008-03, Vol.205 (3), p.612-625
Main Authors: Hoppe, A., Balster, T., Muck, T., Wagner, V.
Format: Article
Language:English
Subjects:
73.40.Cg
73.61.Ph
73.63.−b
81.16.Nd
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Summary:To achieve high performance organic field effect transistors (OFETs) with enhanced currents, high switching speeds and improved integration density the channel length L is downscaled to the sub‐micrometer regime. The influence of important scaling parameters on the electrical performance of bottom contact devices is analyzed. High‐mobility oligo‐ and polythiophenes were used as semiconductor, which combine the advantages of highly ordered growth with processibility from solution. Devices with optimized parameters exhibit high switching frequencies beyond 2 MHz. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6300
0031-8965
1862-6319
DOI:10.1002/pssa.200723442