3D unsteady analysis of melt flow and segregation during EFG Si crystal growth

Ga transport in the melt during EFG Si crystal growth has been simulated within a 3D unsteady approach. The computations reveal reasons of effective redistribution of the impurity in the crystallization system. The computational results are compared with experimental data obtained in a new type of E...

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Bibliographic Details
Published in:Journal of crystal growth 2008-04, Vol.310 (7), p.2209-2214
Main Authors: Smirnova, O.V., Kalaev, V.V., Seidl, A., Birkmann, B.
Format: Article
Language:English
Subjects:
A1. Computer simulation
A1. Mass transfer
A2. Edge-defined film-fed growth
B1. Si
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Equations of state, phase equilibria, and phase transitions
Exact sciences and technology
Growth from melts
zone melting and refining
Materials science
Methods of crystal growth
physics of crystal growth
Physics
Solid-solid transitions
Solubility, segregation, and mixing
phase separation
Specific phase transitions
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
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Summary:Ga transport in the melt during EFG Si crystal growth has been simulated within a 3D unsteady approach. The computations reveal reasons of effective redistribution of the impurity in the crystallization system. The computational results are compared with experimental data obtained in a new type of EFG furnace, designed for the growth of dodecagonally shaped silicon tubes of about 0.5 m diameter. To study the effect of 3D unsteady melt motion, the results are compared with 2D axisymmetric computations of Ga transport.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2007.10.071