Coalescence of domes and superdomes at a low growth rate or during annealing: Towards the formation of flat-top superdomes

We investigate the morphology of islands obtained by epitaxial growth of Ge on Si(0 0 1). During a low growth rate or during annealing and depending of the quench method, we observe the formation of a new type of superdomes, which exhibit additional {15 3 23} facets, an increase of their {0 0 1} and...

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Bibliographic Details
Published in:Surface science 2008-07, Vol.602 (13), p.2157-2161
Main Authors: Richard, M.-I., Chen, G., Schülli, T.U., Renaud, G., Bauer, G.
Format: Article
Language:English
Subjects:
Annealing
Atomic force microscopy
Coalescence
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Faceting
Germanium islands
Growth
Molecular-beam epitaxy
Physics
Silicon
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Summary:We investigate the morphology of islands obtained by epitaxial growth of Ge on Si(0 0 1). During a low growth rate or during annealing and depending of the quench method, we observe the formation of a new type of superdomes, which exhibit additional {15 3 23} facets, an increase of their {0 0 1} and {1 0 5} facet area on their top and a smaller aspect ratio compared to known superdomes. This flat-top superdome shape results from the complex evolution of domes and superdomes: coalescence, intermixing and ripening. Dome or superdome coalescence which results in the newly observed shape appears as a dominant pathway towards dislocation nucleation for the investigated temperature range.
ISSN:0039-6028
1879-2758
DOI:10.1016/j.susc.2008.04.024