Dual band CMOS LNA design with current reuse topology

• Published in: International journal of electronics 2008-01, Vol.95 (3), p.193-210
• Main Authors: Ben Amor, M., Fakhfakh, A., Mnif, H., Loulou, M.
• Format: Article
• Language: English
• Subjects: Amplifiers; Applied sciences; Circuit properties; current reuse; Design. Technologies. Operation analysis. Testing; Dual band; Electric, optical and optoelectronic circuits; Electrical engineering. Electrical power engineering; Electronic circuits; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; High gain; Integrated circuits; Low noise amplifier (LNA); Power electronics, power supplies; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; spiral inductor
• ISSN: 0020-7217; 1362-3060
• DOI: 10.1080/00207210701827863

A dual band receiver architecture is introduced; it is able to make simultaneous operations at two different frequency bands. This architecture uses a dual band low noise amplifier (LNA). A novel high gain and low noise amplifier topology is proposed. This paper presents a general methodology to design an LNA with current reuse topology for the two standards GSM and UMTS at 947.5 MHz and 2.14 GHz frequencies, respectively. A fully integrated dual band LNA was designed using 0.35 µm CMOS process. At 947.5 MHz, the LNA exhibits a noise figure of 2.3 dB, a voltage gain of 28 dB and CP1 of −12 dBm. However, the LNA at 2.14 GHz features a noise figure of 2.71 dB, a voltage gain of 17 dB and a CP1 of −4.5 dBm. The power consumption is 37.5 mW under a power supply voltage of 2.5 V.