Effect of source composition on the vapor phase epitaxy of Cd1-xZnxTe large-area layers

Cadmium zinc telluride (Cd1-xZnxTe) epitaxial layers were grown by vapor phase epitaxy (VPE) to obtain material suitable for applications in photonics and radiation detectors. The VPE experiments were carried out in the modified Pfeiffer Classic 500 coating system, using Si 6-in substrates and Cd1-x...

Full description

Saved in:
Bibliographic Details
Published in:Journal of crystal growth 2008-04, Vol.310 (7-9), p.1669-1673
Main Authors: SOCHINSKII, N. V, ABELLAN, M, RODRIGUEZ-FERNANDEZ, J, PLAZA, J. L, CARCELEN, V, DIEGUEZ, E
Format: Article
Language:English
Subjects:
Applied sciences
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Optoelectronic devices
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Theory and models of film growth
Vapor phase epitaxy
growth from vapor phase
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Cadmium zinc telluride (Cd1-xZnxTe) epitaxial layers were grown by vapor phase epitaxy (VPE) to obtain material suitable for applications in photonics and radiation detectors. The VPE experiments were carried out in the modified Pfeiffer Classic 500 coating system, using Si 6-in substrates and Cd1-xZnxTe ternary sources grown by the Bridgman method. To study the effect of source composition, the Cd1-xZnxTe sources and as-grown layers were characterized by a scanning electronic microscopy (SEM), composition analysis (EDAX) and X-ray diffractometry (XRD). It was shown that the prolonged VPE growth is followed by the continuous deterioration of source composition that results in an inhomogeneous enrichment of Cd1-xZnxTe layers with Zn. Nevertheless, the fast VPE runs using the sources in the form of thin polycrystalline wafers provide the uniform Cd1-xZnxTe layers that could be considered for applications.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2007.12.040