DC and AC conductivities of (As 2S 3) 100− x (AsSe 0.5Te 0.5I) x chalcogenide glasses

• Published in: Physica. B, Condensed matter Condensed matter, 2008-08, Vol.403 (17), p.2578-2583
• Main Authors: Lukić, S.R., Skuban, S.J., Skuban, F., Petrović, D.M., Tver’yanovich, A.S.
• Format: Article
• Language: English
• Subjects: Chalcogenide glass; Conduction activation energy; Electrical conductivity
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2008.01.038

The DC and AC conductivities of samples from the system (As 2S 3) 100− x (AsSe 0.5Te 0.5I) x , where x=0, 5, 10, 15, 20, 25, 30, 35, 50, 70 and 90 mol%, were measured as a function of temperature. Besides, the AC conductivities of the samples with x=10 and 30 were measured as a function of frequency from room temperature to the glass transition temperature. The DC conductivity dependence on temperature is of the Arrhenius type, whereas the value of the pre-exponential factor suggests the electrical conduction by localized states in the band tails and by localized states near the Fermi level. The small values of the conduction activation energy (10 −2–10 −1 eV) obtained at higher frequencies suggest that the conduction in these materials is due to hopping of charge carriers between close defect states near the Fermi level.