Loading…
Growth of TGS single crystal by conventional and SR method and its analysis on the basis of mechanical, thermal, optical and etching studies
Unidirectional bulk ferroelectric Tri glycine sulphate (TGS) single crystal of diameter 18 mm and length 150 mm was successfully grown by SR method. The grown TGS single crystal was characterized using etching, Vicker's microhardness, TG–DTA and UV–Vis analysis. The TGS crystals grown by SR met...
Saved in:
Published in: | Materials letters 2008-08, Vol.62 (23), p.3830-3832 |
---|---|
Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | cdi_FETCH-LOGICAL-c337t-a9b696c3ee785de1db6a0be27d4be69708b3c05ae943a6cbae252ec27b937d713 |
---|---|
cites | cdi_FETCH-LOGICAL-c337t-a9b696c3ee785de1db6a0be27d4be69708b3c05ae943a6cbae252ec27b937d713 |
container_end_page | 3832 |
container_issue | 23 |
container_start_page | 3830 |
container_title | Materials letters |
container_volume | 62 |
creator | Pandian, M. Senthil Balamurugan, N. Ganesh, V. Raja Shekar, P.V. Kishan Rao, K. Ramasamy, P. |
description | Unidirectional bulk ferroelectric Tri glycine sulphate (TGS) single crystal of diameter 18 mm and length 150 mm was successfully grown by SR method. The grown TGS single crystal was characterized using etching, Vicker's microhardness, TG–DTA and UV–Vis analysis. The TGS crystals grown by SR method have higher hardness than conventional method grown crystals. Dislocation density (DD) is less in SR grown crystal compared to conventional method grown TGS crystals. The transmittance of SR grown TGS is 8% higher than that of the conventional grown crystal. |
doi_str_mv | 10.1016/j.matlet.2008.04.078 |
format | article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_32911095</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0167577X08004370</els_id><sourcerecordid>32911095</sourcerecordid><originalsourceid>FETCH-LOGICAL-c337t-a9b696c3ee785de1db6a0be27d4be69708b3c05ae943a6cbae252ec27b937d713</originalsourceid><addsrcrecordid>eNp9UE1r3DAQFSWFbtL8gx506il2Jcu2rEshhHQTCBSSFHoT-pittdjSRtIm7H_oj46823NPM2_mvTfMQ-gLJTUltP-2rWeVJ8h1Q8hQk7YmfPiAVnTgrGoFF2doVWi86jj__Qmdp7QlhLSCtCv0dx3DWx5x2ODn9RNOzv-ZAJt4SFlNWB-wCf4VfHbBF6y8xU-PeIY8BntELqdS1XRILuHgcR4Ba3UEm8Izo_LOqOlqWcR5acIuL5OjGrIZy0Wc8t46SJ_Rx42aElz-qxfo14_b55u76uHn-v7m-qEyjPFcKaF70RsGwIfOArW6V0RDw22roRecDJoZ0ikQLVO90QqargHTcC0Yt5yyC_T15LuL4WUPKcvZJQPTpDyEfZKsEZQS0RVieyKaGFKKsJG76GYVD5ISuUQvt_IUvVyil6SVJfoi-36SQXni1UGUyTjwBqyLYLK0wf3f4B2WGpGx</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>32911095</pqid></control><display><type>article</type><title>Growth of TGS single crystal by conventional and SR method and its analysis on the basis of mechanical, thermal, optical and etching studies</title><source>ScienceDirect Freedom Collection</source><creator>Pandian, M. Senthil ; Balamurugan, N. ; Ganesh, V. ; Raja Shekar, P.V. ; Kishan Rao, K. ; Ramasamy, P.</creator><creatorcontrib>Pandian, M. Senthil ; Balamurugan, N. ; Ganesh, V. ; Raja Shekar, P.V. ; Kishan Rao, K. ; Ramasamy, P.</creatorcontrib><description>Unidirectional bulk ferroelectric Tri glycine sulphate (TGS) single crystal of diameter 18 mm and length 150 mm was successfully grown by SR method. The grown TGS single crystal was characterized using etching, Vicker's microhardness, TG–DTA and UV–Vis analysis. The TGS crystals grown by SR method have higher hardness than conventional method grown crystals. Dislocation density (DD) is less in SR grown crystal compared to conventional method grown TGS crystals. The transmittance of SR grown TGS is 8% higher than that of the conventional grown crystal.</description><identifier>ISSN: 0167-577X</identifier><identifier>EISSN: 1873-4979</identifier><identifier>DOI: 10.1016/j.matlet.2008.04.078</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>A1.Specific orientation ; A2.Growth from solutions ; A2.Single crystal growth</subject><ispartof>Materials letters, 2008-08, Vol.62 (23), p.3830-3832</ispartof><rights>2008 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c337t-a9b696c3ee785de1db6a0be27d4be69708b3c05ae943a6cbae252ec27b937d713</citedby><cites>FETCH-LOGICAL-c337t-a9b696c3ee785de1db6a0be27d4be69708b3c05ae943a6cbae252ec27b937d713</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Pandian, M. Senthil</creatorcontrib><creatorcontrib>Balamurugan, N.</creatorcontrib><creatorcontrib>Ganesh, V.</creatorcontrib><creatorcontrib>Raja Shekar, P.V.</creatorcontrib><creatorcontrib>Kishan Rao, K.</creatorcontrib><creatorcontrib>Ramasamy, P.</creatorcontrib><title>Growth of TGS single crystal by conventional and SR method and its analysis on the basis of mechanical, thermal, optical and etching studies</title><title>Materials letters</title><description>Unidirectional bulk ferroelectric Tri glycine sulphate (TGS) single crystal of diameter 18 mm and length 150 mm was successfully grown by SR method. The grown TGS single crystal was characterized using etching, Vicker's microhardness, TG–DTA and UV–Vis analysis. The TGS crystals grown by SR method have higher hardness than conventional method grown crystals. Dislocation density (DD) is less in SR grown crystal compared to conventional method grown TGS crystals. The transmittance of SR grown TGS is 8% higher than that of the conventional grown crystal.</description><subject>A1.Specific orientation</subject><subject>A2.Growth from solutions</subject><subject>A2.Single crystal growth</subject><issn>0167-577X</issn><issn>1873-4979</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp9UE1r3DAQFSWFbtL8gx506il2Jcu2rEshhHQTCBSSFHoT-pittdjSRtIm7H_oj46823NPM2_mvTfMQ-gLJTUltP-2rWeVJ8h1Q8hQk7YmfPiAVnTgrGoFF2doVWi86jj__Qmdp7QlhLSCtCv0dx3DWx5x2ODn9RNOzv-ZAJt4SFlNWB-wCf4VfHbBF6y8xU-PeIY8BntELqdS1XRILuHgcR4Ba3UEm8Izo_LOqOlqWcR5acIuL5OjGrIZy0Wc8t46SJ_Rx42aElz-qxfo14_b55u76uHn-v7m-qEyjPFcKaF70RsGwIfOArW6V0RDw22roRecDJoZ0ikQLVO90QqargHTcC0Yt5yyC_T15LuL4WUPKcvZJQPTpDyEfZKsEZQS0RVieyKaGFKKsJG76GYVD5ISuUQvt_IUvVyil6SVJfoi-36SQXni1UGUyTjwBqyLYLK0wf3f4B2WGpGx</recordid><startdate>20080831</startdate><enddate>20080831</enddate><creator>Pandian, M. Senthil</creator><creator>Balamurugan, N.</creator><creator>Ganesh, V.</creator><creator>Raja Shekar, P.V.</creator><creator>Kishan Rao, K.</creator><creator>Ramasamy, P.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20080831</creationdate><title>Growth of TGS single crystal by conventional and SR method and its analysis on the basis of mechanical, thermal, optical and etching studies</title><author>Pandian, M. Senthil ; Balamurugan, N. ; Ganesh, V. ; Raja Shekar, P.V. ; Kishan Rao, K. ; Ramasamy, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-a9b696c3ee785de1db6a0be27d4be69708b3c05ae943a6cbae252ec27b937d713</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>A1.Specific orientation</topic><topic>A2.Growth from solutions</topic><topic>A2.Single crystal growth</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pandian, M. Senthil</creatorcontrib><creatorcontrib>Balamurugan, N.</creatorcontrib><creatorcontrib>Ganesh, V.</creatorcontrib><creatorcontrib>Raja Shekar, P.V.</creatorcontrib><creatorcontrib>Kishan Rao, K.</creatorcontrib><creatorcontrib>Ramasamy, P.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pandian, M. Senthil</au><au>Balamurugan, N.</au><au>Ganesh, V.</au><au>Raja Shekar, P.V.</au><au>Kishan Rao, K.</au><au>Ramasamy, P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of TGS single crystal by conventional and SR method and its analysis on the basis of mechanical, thermal, optical and etching studies</atitle><jtitle>Materials letters</jtitle><date>2008-08-31</date><risdate>2008</risdate><volume>62</volume><issue>23</issue><spage>3830</spage><epage>3832</epage><pages>3830-3832</pages><issn>0167-577X</issn><eissn>1873-4979</eissn><abstract>Unidirectional bulk ferroelectric Tri glycine sulphate (TGS) single crystal of diameter 18 mm and length 150 mm was successfully grown by SR method. The grown TGS single crystal was characterized using etching, Vicker's microhardness, TG–DTA and UV–Vis analysis. The TGS crystals grown by SR method have higher hardness than conventional method grown crystals. Dislocation density (DD) is less in SR grown crystal compared to conventional method grown TGS crystals. The transmittance of SR grown TGS is 8% higher than that of the conventional grown crystal.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.matlet.2008.04.078</doi><tpages>3</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0167-577X |
ispartof | Materials letters, 2008-08, Vol.62 (23), p.3830-3832 |
issn | 0167-577X 1873-4979 |
language | eng |
recordid | cdi_proquest_miscellaneous_32911095 |
source | ScienceDirect Freedom Collection |
subjects | A1.Specific orientation A2.Growth from solutions A2.Single crystal growth |
title | Growth of TGS single crystal by conventional and SR method and its analysis on the basis of mechanical, thermal, optical and etching studies |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T15%3A05%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth%20of%20TGS%20single%20crystal%20by%20conventional%20and%20SR%20method%20and%20its%20analysis%20on%20the%20basis%20of%20mechanical,%20thermal,%20optical%20and%20etching%20studies&rft.jtitle=Materials%20letters&rft.au=Pandian,%20M.%20Senthil&rft.date=2008-08-31&rft.volume=62&rft.issue=23&rft.spage=3830&rft.epage=3832&rft.pages=3830-3832&rft.issn=0167-577X&rft.eissn=1873-4979&rft_id=info:doi/10.1016/j.matlet.2008.04.078&rft_dat=%3Cproquest_cross%3E32911095%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c337t-a9b696c3ee785de1db6a0be27d4be69708b3c05ae943a6cbae252ec27b937d713%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=32911095&rft_id=info:pmid/&rfr_iscdi=true |