Loading…

Growth of TGS single crystal by conventional and SR method and its analysis on the basis of mechanical, thermal, optical and etching studies

Unidirectional bulk ferroelectric Tri glycine sulphate (TGS) single crystal of diameter 18 mm and length 150 mm was successfully grown by SR method. The grown TGS single crystal was characterized using etching, Vicker's microhardness, TG–DTA and UV–Vis analysis. The TGS crystals grown by SR met...

Full description

Saved in:
Bibliographic Details
Published in:Materials letters 2008-08, Vol.62 (23), p.3830-3832
Main Authors: Pandian, M. Senthil, Balamurugan, N., Ganesh, V., Raja Shekar, P.V., Kishan Rao, K., Ramasamy, P.
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c337t-a9b696c3ee785de1db6a0be27d4be69708b3c05ae943a6cbae252ec27b937d713
cites cdi_FETCH-LOGICAL-c337t-a9b696c3ee785de1db6a0be27d4be69708b3c05ae943a6cbae252ec27b937d713
container_end_page 3832
container_issue 23
container_start_page 3830
container_title Materials letters
container_volume 62
creator Pandian, M. Senthil
Balamurugan, N.
Ganesh, V.
Raja Shekar, P.V.
Kishan Rao, K.
Ramasamy, P.
description Unidirectional bulk ferroelectric Tri glycine sulphate (TGS) single crystal of diameter 18 mm and length 150 mm was successfully grown by SR method. The grown TGS single crystal was characterized using etching, Vicker's microhardness, TG–DTA and UV–Vis analysis. The TGS crystals grown by SR method have higher hardness than conventional method grown crystals. Dislocation density (DD) is less in SR grown crystal compared to conventional method grown TGS crystals. The transmittance of SR grown TGS is 8% higher than that of the conventional grown crystal.
doi_str_mv 10.1016/j.matlet.2008.04.078
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_32911095</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0167577X08004370</els_id><sourcerecordid>32911095</sourcerecordid><originalsourceid>FETCH-LOGICAL-c337t-a9b696c3ee785de1db6a0be27d4be69708b3c05ae943a6cbae252ec27b937d713</originalsourceid><addsrcrecordid>eNp9UE1r3DAQFSWFbtL8gx506il2Jcu2rEshhHQTCBSSFHoT-pittdjSRtIm7H_oj46823NPM2_mvTfMQ-gLJTUltP-2rWeVJ8h1Q8hQk7YmfPiAVnTgrGoFF2doVWi86jj__Qmdp7QlhLSCtCv0dx3DWx5x2ODn9RNOzv-ZAJt4SFlNWB-wCf4VfHbBF6y8xU-PeIY8BntELqdS1XRILuHgcR4Ba3UEm8Izo_LOqOlqWcR5acIuL5OjGrIZy0Wc8t46SJ_Rx42aElz-qxfo14_b55u76uHn-v7m-qEyjPFcKaF70RsGwIfOArW6V0RDw22roRecDJoZ0ikQLVO90QqargHTcC0Yt5yyC_T15LuL4WUPKcvZJQPTpDyEfZKsEZQS0RVieyKaGFKKsJG76GYVD5ISuUQvt_IUvVyil6SVJfoi-36SQXni1UGUyTjwBqyLYLK0wf3f4B2WGpGx</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>32911095</pqid></control><display><type>article</type><title>Growth of TGS single crystal by conventional and SR method and its analysis on the basis of mechanical, thermal, optical and etching studies</title><source>ScienceDirect Freedom Collection</source><creator>Pandian, M. Senthil ; Balamurugan, N. ; Ganesh, V. ; Raja Shekar, P.V. ; Kishan Rao, K. ; Ramasamy, P.</creator><creatorcontrib>Pandian, M. Senthil ; Balamurugan, N. ; Ganesh, V. ; Raja Shekar, P.V. ; Kishan Rao, K. ; Ramasamy, P.</creatorcontrib><description>Unidirectional bulk ferroelectric Tri glycine sulphate (TGS) single crystal of diameter 18 mm and length 150 mm was successfully grown by SR method. The grown TGS single crystal was characterized using etching, Vicker's microhardness, TG–DTA and UV–Vis analysis. The TGS crystals grown by SR method have higher hardness than conventional method grown crystals. Dislocation density (DD) is less in SR grown crystal compared to conventional method grown TGS crystals. The transmittance of SR grown TGS is 8% higher than that of the conventional grown crystal.</description><identifier>ISSN: 0167-577X</identifier><identifier>EISSN: 1873-4979</identifier><identifier>DOI: 10.1016/j.matlet.2008.04.078</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>A1.Specific orientation ; A2.Growth from solutions ; A2.Single crystal growth</subject><ispartof>Materials letters, 2008-08, Vol.62 (23), p.3830-3832</ispartof><rights>2008 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c337t-a9b696c3ee785de1db6a0be27d4be69708b3c05ae943a6cbae252ec27b937d713</citedby><cites>FETCH-LOGICAL-c337t-a9b696c3ee785de1db6a0be27d4be69708b3c05ae943a6cbae252ec27b937d713</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Pandian, M. Senthil</creatorcontrib><creatorcontrib>Balamurugan, N.</creatorcontrib><creatorcontrib>Ganesh, V.</creatorcontrib><creatorcontrib>Raja Shekar, P.V.</creatorcontrib><creatorcontrib>Kishan Rao, K.</creatorcontrib><creatorcontrib>Ramasamy, P.</creatorcontrib><title>Growth of TGS single crystal by conventional and SR method and its analysis on the basis of mechanical, thermal, optical and etching studies</title><title>Materials letters</title><description>Unidirectional bulk ferroelectric Tri glycine sulphate (TGS) single crystal of diameter 18 mm and length 150 mm was successfully grown by SR method. The grown TGS single crystal was characterized using etching, Vicker's microhardness, TG–DTA and UV–Vis analysis. The TGS crystals grown by SR method have higher hardness than conventional method grown crystals. Dislocation density (DD) is less in SR grown crystal compared to conventional method grown TGS crystals. The transmittance of SR grown TGS is 8% higher than that of the conventional grown crystal.</description><subject>A1.Specific orientation</subject><subject>A2.Growth from solutions</subject><subject>A2.Single crystal growth</subject><issn>0167-577X</issn><issn>1873-4979</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp9UE1r3DAQFSWFbtL8gx506il2Jcu2rEshhHQTCBSSFHoT-pittdjSRtIm7H_oj46823NPM2_mvTfMQ-gLJTUltP-2rWeVJ8h1Q8hQk7YmfPiAVnTgrGoFF2doVWi86jj__Qmdp7QlhLSCtCv0dx3DWx5x2ODn9RNOzv-ZAJt4SFlNWB-wCf4VfHbBF6y8xU-PeIY8BntELqdS1XRILuHgcR4Ba3UEm8Izo_LOqOlqWcR5acIuL5OjGrIZy0Wc8t46SJ_Rx42aElz-qxfo14_b55u76uHn-v7m-qEyjPFcKaF70RsGwIfOArW6V0RDw22roRecDJoZ0ikQLVO90QqargHTcC0Yt5yyC_T15LuL4WUPKcvZJQPTpDyEfZKsEZQS0RVieyKaGFKKsJG76GYVD5ISuUQvt_IUvVyil6SVJfoi-36SQXni1UGUyTjwBqyLYLK0wf3f4B2WGpGx</recordid><startdate>20080831</startdate><enddate>20080831</enddate><creator>Pandian, M. Senthil</creator><creator>Balamurugan, N.</creator><creator>Ganesh, V.</creator><creator>Raja Shekar, P.V.</creator><creator>Kishan Rao, K.</creator><creator>Ramasamy, P.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20080831</creationdate><title>Growth of TGS single crystal by conventional and SR method and its analysis on the basis of mechanical, thermal, optical and etching studies</title><author>Pandian, M. Senthil ; Balamurugan, N. ; Ganesh, V. ; Raja Shekar, P.V. ; Kishan Rao, K. ; Ramasamy, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-a9b696c3ee785de1db6a0be27d4be69708b3c05ae943a6cbae252ec27b937d713</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>A1.Specific orientation</topic><topic>A2.Growth from solutions</topic><topic>A2.Single crystal growth</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pandian, M. Senthil</creatorcontrib><creatorcontrib>Balamurugan, N.</creatorcontrib><creatorcontrib>Ganesh, V.</creatorcontrib><creatorcontrib>Raja Shekar, P.V.</creatorcontrib><creatorcontrib>Kishan Rao, K.</creatorcontrib><creatorcontrib>Ramasamy, P.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pandian, M. Senthil</au><au>Balamurugan, N.</au><au>Ganesh, V.</au><au>Raja Shekar, P.V.</au><au>Kishan Rao, K.</au><au>Ramasamy, P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of TGS single crystal by conventional and SR method and its analysis on the basis of mechanical, thermal, optical and etching studies</atitle><jtitle>Materials letters</jtitle><date>2008-08-31</date><risdate>2008</risdate><volume>62</volume><issue>23</issue><spage>3830</spage><epage>3832</epage><pages>3830-3832</pages><issn>0167-577X</issn><eissn>1873-4979</eissn><abstract>Unidirectional bulk ferroelectric Tri glycine sulphate (TGS) single crystal of diameter 18 mm and length 150 mm was successfully grown by SR method. The grown TGS single crystal was characterized using etching, Vicker's microhardness, TG–DTA and UV–Vis analysis. The TGS crystals grown by SR method have higher hardness than conventional method grown crystals. Dislocation density (DD) is less in SR grown crystal compared to conventional method grown TGS crystals. The transmittance of SR grown TGS is 8% higher than that of the conventional grown crystal.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.matlet.2008.04.078</doi><tpages>3</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0167-577X
ispartof Materials letters, 2008-08, Vol.62 (23), p.3830-3832
issn 0167-577X
1873-4979
language eng
recordid cdi_proquest_miscellaneous_32911095
source ScienceDirect Freedom Collection
subjects A1.Specific orientation
A2.Growth from solutions
A2.Single crystal growth
title Growth of TGS single crystal by conventional and SR method and its analysis on the basis of mechanical, thermal, optical and etching studies
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T15%3A05%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth%20of%20TGS%20single%20crystal%20by%20conventional%20and%20SR%20method%20and%20its%20analysis%20on%20the%20basis%20of%20mechanical,%20thermal,%20optical%20and%20etching%20studies&rft.jtitle=Materials%20letters&rft.au=Pandian,%20M.%20Senthil&rft.date=2008-08-31&rft.volume=62&rft.issue=23&rft.spage=3830&rft.epage=3832&rft.pages=3830-3832&rft.issn=0167-577X&rft.eissn=1873-4979&rft_id=info:doi/10.1016/j.matlet.2008.04.078&rft_dat=%3Cproquest_cross%3E32911095%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c337t-a9b696c3ee785de1db6a0be27d4be69708b3c05ae943a6cbae252ec27b937d713%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=32911095&rft_id=info:pmid/&rfr_iscdi=true