Highly thermal stable transparent conducting SnO2:Sb epitaxial films prepared on α-Al2O3 (0001) by MOCVD

• Published in: Applied surface science 2008-08, Vol.254 (20), p.6601-6604
• Main Authors: Feng, Xianjin, Ma, Jin, Yang, Fan, Ji, Feng, Zong, Fujian, Luan, Caina, Ma, Honglei
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Physics
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2008.04.028

Antimony-doped tin oxide (SnO2:Sb) single crystalline films have been prepared on alpha-Al2O3 (0 0 0 1) substrates by metal organic chemical vapor deposition (MOCVD). The antimony doping was varied from 2% to 7% (atomic ratio). Post-deposition annealing of the SnO2:Sb films was carried out at 700-1100 deg C for 30 min in atmosphere ambient. The effect of annealing on the structural, electrical and optical properties of the films was investigated in detail. All the SnO2:Sb films had good thermal stability under 900 deg C, and the 5% Sb-doped SnO2 film exhibited the best opto-electrical properties. Annealed above 900 deg C, the 7% Sb-doped SnO2 film still kept high thermal stability and showed good electrical and optical properties even at 1100 deg C.