Loading…
Sintering and dielectric properties of (Ta2O5)1−x(TiO2)x polycrystalline ceramics
(Ta 2 O 5 ) 1− x (TiO 2 ) x system ceramics has been studied intensively as a promising dielectric material for next generation of high density dynamic random access memories instead of SiO 2 and Si 3 N 4 . It is found that the dielectric permittivity of (Ta 2 O 5 ) 1− x (TiO 2 ) x ceramics was depe...
Saved in:
Published in: | Journal of electroceramics 2008-12, Vol.21 (1-4), p.577-580 |
---|---|
Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | (Ta
2
O
5
)
1−
x
(TiO
2
)
x
system ceramics has been studied intensively as a promising dielectric material for next generation of high density dynamic random access memories instead of SiO
2
and Si
3
N
4
. It is found that the dielectric permittivity of (Ta
2
O
5
)
1−
x
(TiO
2
)
x
ceramics was dependent of fabrication process. But in the previous work, their calcining and sintering time were too long, generally for 24 h or even more. A relatively quick sintering process was provided which calcining and sintering time can be decreased to 12 h at 1200°C and 1 h at 1550°C, respectively. This kind of sintering process can save a lot of energy and time that is in favor of the industrial production. Under this sintering process, the composition dependent dielectric properties of (Ta
2
O
5
)
1−
x
(TiO
2
)
x
ceramics have been studied in a wide range of composition (0.01 ≤
x
≤ 0.20), and the dielectric constants of most compositions can be drastically enhanced. The maximum dielectric value can reach 216 at composition
x
= 0.04. In the meantime, the mechanism of improvement of ceramic dielectric constants sintered at 1550°C was also discussed. |
---|---|
ISSN: | 1385-3449 1573-8663 |
DOI: | 10.1007/s10832-007-9255-7 |