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Sintering and dielectric properties of (Ta2O5)1−x(TiO2)x polycrystalline ceramics

(Ta 2 O 5 ) 1− x (TiO 2 ) x system ceramics has been studied intensively as a promising dielectric material for next generation of high density dynamic random access memories instead of SiO 2 and Si 3 N 4 . It is found that the dielectric permittivity of (Ta 2 O 5 ) 1− x (TiO 2 ) x ceramics was depe...

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Bibliographic Details
Published in:Journal of electroceramics 2008-12, Vol.21 (1-4), p.577-580
Main Authors: Wang, Yue, Zhu, Xue-wen, Jiang, Yi-jian
Format: Article
Language:English
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Summary:(Ta 2 O 5 ) 1− x (TiO 2 ) x system ceramics has been studied intensively as a promising dielectric material for next generation of high density dynamic random access memories instead of SiO 2 and Si 3 N 4 . It is found that the dielectric permittivity of (Ta 2 O 5 ) 1− x (TiO 2 ) x ceramics was dependent of fabrication process. But in the previous work, their calcining and sintering time were too long, generally for 24 h or even more. A relatively quick sintering process was provided which calcining and sintering time can be decreased to 12 h at 1200°C and 1 h at 1550°C, respectively. This kind of sintering process can save a lot of energy and time that is in favor of the industrial production. Under this sintering process, the composition dependent dielectric properties of (Ta 2 O 5 ) 1− x (TiO 2 ) x ceramics have been studied in a wide range of composition (0.01 ≤  x  ≤ 0.20), and the dielectric constants of most compositions can be drastically enhanced. The maximum dielectric value can reach 216 at composition x  = 0.04. In the meantime, the mechanism of improvement of ceramic dielectric constants sintered at 1550°C was also discussed.
ISSN:1385-3449
1573-8663
DOI:10.1007/s10832-007-9255-7