Structure and dielectric properties of Ba(Sn0.2Ti0.8)O3 thin films grown on different substrates by a sol-gel process

• Published in: Journal of electroceramics 2008-12, Vol.21 (1-4), p.649-652
• Main Authors: Song, S. N., Zhai, J. W., Yao, X.
• Format: Article
• Language: English
• Subjects: Ceramics; Characterization and Evaluation of Materials; Chemistry and Materials Science; Composites; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Crystallography and Scattering Methods; Dielectric loss and relaxation; Dielectric properties; Dielectric properties of solids and liquids; Dielectric thin films; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Electrochemistry; Exact sciences and technology; Glass; Materials Science; Natural Materials; Optical and Electronic Materials; Permittivity (dielectric function); Physics; Thin films
• ISSN: 1385-3449; 1573-8663
• DOI: 10.1007/s10832-007-9276-2

Ba(Sn 0.2 Ti 0.8 )O 3 (BTS) thin films were deposited on Pt/Ti/SiO 2 /Si and LaNiO 3 /Pt/Ti/SiO 2 /Si substrates by a sol-gel processing technique, respectively. The influences of substrates on the phase and microstructure of the thin films were examined. Dielectric properties of the thin films were investigated as a function of frequency and direct current electric field. The results showed that the substrates strongly influenced the microstructure and the dielectric properties of the films. The properties of BTS thin films on LaNiO 3 /Pt/Ti/SiO 2 /Si substrates were superior to that of the films grown on Pt/Ti/SiO 2 /Si substrates.