Synthesis and light emission of fine and straight Si nanowires

Using Au as catalyst, fine and straight Si nanowires (SiNWs) with diameters of 8-30 nm and lengths of several micrometers were synthesized by the self-designed chemical vapor deposition system at 480 deg C. The influence of the growth pressures on the nanowire growth and morphology has been investig...

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Bibliographic Details
Published in:Journal of Optoelectronics and Advanced Materials 2008-12, Vol.10 (12), p.3450-3453
Main Authors: Wang, Jinxiao, Yan, Hengqing, Qin, Yanli, Gao, Pingqi, Li, Junshuai, Yin, Min, Peng, Shanglong, He, Deyan
Format: Article
Language:English
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Summary:Using Au as catalyst, fine and straight Si nanowires (SiNWs) with diameters of 8-30 nm and lengths of several micrometers were synthesized by the self-designed chemical vapor deposition system at 480 deg C. The influence of the growth pressures on the nanowire growth and morphology has been investigated by scanning electron microscopy (SEM). High-resolution transmission electron microscope (HRTEM) images indicate the growth direction of the nanowires are along the [1 1 1] with thin amorphous silicon oxide sheaths (-3 nm). The SiNWs with the Raman peak positions at 517 cm-1 exhibit a photoluminescence (PL) peak centered at 750 nm.
ISSN:1454-4164