High-pressure and high-temperature annealing effects of boron-implanted diamond

We show that high-pressure and high-temperature (HPHT) annealing of ion-implanted diamond is efficient as a doping technique. The HPHT annealing condition is located in the thermodynamically stable region for diamond. The HPHT annealing is highly effective for the recovery of damage induced by ion i...

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Bibliographic Details
Published in:Diamond and related materials 2008-04, Vol.17 (4), p.502-505
Main Authors: Ueda, K., Kasu, M.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Defects and impurities in crystals
microstructure
Diamond
Doping
Doping and impurity implantation in other materials
Exact sciences and technology
Fullerenes and related materials
diamonds, graphite
High-pressure and high-temperature annealing
Ion-implantation
Materials science
Physics
Specific materials
Structure of solids and liquids
crystallography
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Summary:We show that high-pressure and high-temperature (HPHT) annealing of ion-implanted diamond is efficient as a doping technique. The HPHT annealing condition is located in the thermodynamically stable region for diamond. The HPHT annealing is highly effective for the recovery of damage induced by ion implantation. In the entire annealing temperature range, the HPHT annealing is more efficient than conventional thermal annealing methods such as vacuum annealing. At 1400 °C, we obtained the highest boron doping efficiency of 7.1%, which is ten times higher than that by vacuum annealing.
ISSN:0925-9635
1879-0062
DOI:10.1016/j.diamond.2007.12.017