The electric field effect on binding energy of hydrogenic impurity in zinc-blende GaN/AlxGa1-xN spherical quantum dot

• Published in: Physica. B, Condensed matter Condensed matter, 2009-01, Vol.404 (1), p.122-126
• Main Authors: Wu, Huiting, Wang, Hailong, Jiang, Liming, Gong, Qian, Feng, Songlin
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Physics; Quantum dots
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2008.10.013

Within the framework of effective mass approximation, the binding energy of a hydrogenic donor impurity in zinc-blende GaN/AlxGa1-xN spherical quantum dot (QD) is investigated using the plane wave basis. The results show that the binding energy is highly dependent on impurity position, QD size, Al content and external field. The binding energy is largest when the donor impurity is located at the centre of the QD and the binding energy of impurity is degenerate for symmetrical positions with respect to the centre of QD without the external electric field. The maximum of the donor binding energy is shifted from the centre of QD and the degenerating energy levels for symmetrical positions with respect to the centre of QD are split in the presence of the external electric field. The binding energy is more sensitive to the external electric field for the larger QD and lower Al content. In addition, the Stark shift of the binding energy is also calculated.