Analysis of oxygen incorporation in unidirectionally solidified multicrystalline silicon for solar cells

• Published in: Journal of crystal growth 2008-04, Vol.310 (7), p.2204-2208
• Main Authors: Matsuo, Hitoshi, Bairava Ganesh, R., Nakano, Satoshi, Liu, Lijun, Arafune, Koji, Ohshita, Yoshio, Yamaguchi, Masafumi, Kakimoto, Koichi
• Format: Article
• Language: English
• Subjects: A1. Directional solidification; A1. Impurities; Applied sciences; B2. Semiconducting silicon; B3. Solar cells; Cross-disciplinary physics: materials science; rheology; Electronics; Energy; Exact sciences and technology; Growth from melts; zone melting and refining; Materials; Materials science; Methods of crystal growth; physics of crystal growth; Natural energy; Phase diagrams and microstructures developed by solidification and solid-solid phase transformations; Photovoltaic conversion; Physics; Solar cells. Photoelectrochemical cells; Solar energy; Solidification
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2007.12.017

We studied the process of oxygen transfer from a quartz crucible to a multicrystalline silicon during unidirectional solidification process. We investigated the boundary layer thickness of oxygen concentration near a crucible wall region using Fourier transform infrared spectrometer (FTIR) measurement. The results suggest that oxygen concentration was increased near a crucible wall, and the boundary layer thickness of oxygen concentration was estimated to be 2–6 mm. The estimated value of boundary layer thickness of oxygen concentrations is similar to those estimated by analytical and numerical calculation. These results suggest that the oxygen was dissolved from a crucible wall through the liner made of Si 3N 4 to the melt during growth process.