Innovation in crystal growth: A personal perspective

• Published in: Journal of crystal growth 2008-04, Vol.310 (7), p.1315-1323
• Main Author: Mullin, J.B.
• Format: Article
• Language: English
• Subjects: A1. Facet effect; A1. Innovation; A1. IOCG; A1. Segregation; A2. Adduct purification; A2. Liquid encapsulation Czochralski (LEC); A2. Melt growth; B2. III–V Semiconductors; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Equations of state, phase equilibria, and phase transitions; Exact sciences and technology; Growth from melts; zone melting and refining; Materials science; Methods of crystal growth; physics of crystal growth; Physics; Solubility, segregation, and mixing; phase separation
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2007.10.082

The evolution of crystal growth has been crucially dependent on revolutionary innovations and initiatives involving ideas, technology and communication. A personal perspective is presented on some of these aspects in connection with the early history of semiconductors that have helped evolve our knowledge and advance the science and technology of crystal growth. The presentation considers examples from work on germanium, silicon, indium antimonide, gallium arsenide, indium phosphide, gallium phosphide and mercury cadmium telluride. In connection with metal organic vapour phase epitaxy (MOVPE), the influence of adduct purification for alkyls is noted together with the growth of Hg x Cd 1− x Te. The role of crystal growth organisations together with initiatives in the publication of the Journal of Crystal Growth (JCG) and the pivotal role of the International Organisation of Crystal Growth (IOCG) are also highlighted in the quest for scientific excellence.