Ionization of xenon Rydberg atoms at oxidized Si(1 0 0) surfaces

The ionization of xenon Rydberg atoms excited to the lowest states in the n = 20 Stark manifold at Si(1 0 0) surfaces possessing a robust (∼10 Å) native oxide layer is investigated. The data show that a sizeable fraction of the incident atoms are ionized relatively far from the surface through enhan...

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Bibliographic Details
Published in:Surface science 2008-04, Vol.602 (7), p.1306-1312
Main Authors: Neufeld, D.D., Dunham, H.R., Wethekam, S., Lancaster, J.C., Dunning, F.B.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Field ionization
Insulating surfaces
Ion–solid interactions
Physics
Semiconducting surfaces
Silicon
Silicon oxides
Single crystal surfaces
Surface electronic phenomena
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Summary:The ionization of xenon Rydberg atoms excited to the lowest states in the n = 20 Stark manifold at Si(1 0 0) surfaces possessing a robust (∼10 Å) native oxide layer is investigated. The data show that a sizeable fraction of the incident atoms are ionized relatively far from the surface through enhanced tunneling due to the presence of localized stray fields at the surface associated with surface charging or with surface inhomogeneities. A simple model is presented to justify this assertion.
ISSN:0039-6028
1879-2758
DOI:10.1016/j.susc.2007.12.042