Photoelectron emission from heavily B-doped homoepitaxial diamond films

• Published in: Diamond and related materials 2008-04, Vol.17 (4), p.813-816
• Main Authors: Takeuchi, D., Tokuda, N., Ogura, M., Yamasaki, S.
• Format: Article
• Language: English
• Subjects: Boron; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Energy band; Exact sciences and technology; Fullerenes and related materials; diamonds, graphite; Materials science; Negative electron affinity; Photoemission yield spectroscopy; Physics; Specific materials; Surface and interface electron states; Surface states, band structure, electron density of states
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/j.diamond.2007.12.054

We discuss the energy band structure near the valence band maximum based on photoemission yield spectroscopy experiments using a hydrogen-terminated heavily boron-doped homoepitaxial diamond film with concentration of 3 × 10 20 cm − 3 . The experimental results showed a metallic photoemission behavior with a negative electron affinity surface. Based on the fitting as metallic photoemission behavior with a Fowler plot, the Fermi level should be at 5.35 eV below the conduction band minimum, which means that the Fermi level lies at 0.12 eV (5.47–5.35 eV) above the valence band maximum. Thus the film shows metallic conduction by the Mott transition, but not as degenerate semiconductor.