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Preparation of diamond like carbon thin films above room temperature and their properties
Diamond like carbon (DLC) thin films were deposited on p-type silicon ( p-Si), quartz and ITO substrates by microwave (MW) surface-wave plasma (SWP) chemical vapor deposition (CVD) at different substrate temperatures (RT ∼ 300 °C). Argon (Ar: 200 sccm) was used as carrier gas while acetylene (C 2H 2...
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Published in: | Diamond and related materials 2008-04, Vol.17 (4), p.680-683 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Diamond like carbon (DLC) thin films were deposited on p-type silicon (
p-Si), quartz and ITO substrates by microwave (MW) surface-wave plasma (SWP) chemical vapor deposition (CVD) at different substrate temperatures (RT ∼
300 °C). Argon (Ar: 200 sccm) was used as carrier gas while acetylene (C
2H
2: 20 sccm) and nitrogen (N: 5 sccm) were used as plasma source. Analytical methods such as X-ray photoelectron spectroscopy (XPS), FT-IR and UV–visible spectroscopy were employed to investigate the structural and optical properties of the DLC thin films respectively. FT-IR spectra show the structural modification of the DLC thin films with substrate temperatures showing the distinct peak around 3350 cm
−
1
wave number; which may corresponds to the sp
2 C–H bond. Tauc optical gap and film thickness both decreased with increasing substrate temperature. The peaks of XPS core level C 1 s spectra of the DLC thin films shifted towards lower binding energy with substrate temperature. We also got the small photoconductivity action of the film deposited at 300 °C on ITO substrate. |
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ISSN: | 0925-9635 1879-0062 |
DOI: | 10.1016/j.diamond.2007.10.007 |