Quantum Confinement and Carrier Localization Effects in ZnO/Mg x Zn1−x O Wells Synthesized by Pulsed Laser Deposition

The optical properties of ZnO/Mg x Zn1-x O (x = 0.17) quantum wells (QWs) grown on c-plane sapphire substrates by pulsed laser deposition are presented. A blueshift in the low-temperature photoluminescence (PL) of the QWs illustrates quantum confinement effects as a function of ZnO well widths in th...

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Bibliographic Details
Published in:Journal of electronic materials 2008-05, Vol.37 (5), p.749-754
Main Authors: Bowen, W.E., Wang, W., Cagin, E., Phillips, J.D.
Format: Article
Language:English
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Summary:The optical properties of ZnO/Mg x Zn1-x O (x = 0.17) quantum wells (QWs) grown on c-plane sapphire substrates by pulsed laser deposition are presented. A blueshift in the low-temperature photoluminescence (PL) of the QWs illustrates quantum confinement effects as a function of ZnO well widths in the range from 3 nm to 10 nm. Enhanced luminescence properties are observed with increasing quantum confinement. PL data indicate weak polarization effects associated with the heterojunctions. Temperature-dependent PL measurements indicate carrier/exciton localization with activation energy of approximately 4-5 meV, which are attributed to potential fluctuations at the well-barrier interface.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-007-0299-x