Preparation and structural properties of MgO films grown on GaAs substrate

• Published in: Applied surface science 2008-04, Vol.254 (12), p.3635-3637
• Main Authors: Chromik, Štefan, Španková, Marianna, Vávra, Ivo, Liday, Jozef, Vogrinčič, Peter, Lobotka, Peter
• Format: Article
• Language: English
• Subjects: Auger electron spectroscopy; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electron and ion emission by liquids and solids; impact phenomena; Electron beam evaporation; Electron impact: auger emission; Exact sciences and technology; Impact phenomena (including electron spectra and sputtering); Materials science; Methods of deposition of films and coatings; film growth and epitaxy; MgO thin films; Physics; Single-crystal and powder diffraction; Structure and morphology; thickness; Structure of solids and liquids; crystallography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Transmission electron microscopy; X-ray diffraction; X-ray diffraction and scattering
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2007.10.068

Epitaxial MgO thin films have been grown on semiinsulating GaAs (0 0 1) substrates using electron beam (e-beam) evaporation. X-ray diffraction indicates c-axis oriented MgO with (0 0 2) reflection only and rocking curve widths ∼2.2–3°. Transmission electron microscopy (TEM) analyses confirm an epitaxial growth of the MgO films. We study the microstructure and the defects at the interface between the MgO film and the GaAs substrate. Auger electron Spectroscopy (AES) concentration depth profiles reveal no contamination of the MgO films by As and Ga at different temperatures of the deposition process.