Dielectric and microwave properties of Ba(Sn0.15Ti0.85)O3 thin films

The in-plane dielectric and microwave properties of Barium tin titanate Ba(Sn0.15Ti0.85)O3 (BTS) thin films grown on LaAlO3 (100) substrates through sol–gel process were investigated. X-ray diffraction was used to characterize the phase structural of the thin films. Microwave properties of the films...

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Bibliographic Details
Published in:Materials letters 2008-03, Vol.62 (8-9), p.1173-1175
Main Authors: Song, S.N., Zhai, J.W., Yao, X.
Format: Article
Language:English
Subjects:
Ferroelectrics
Microwave properties
Sol–gel preparation
Thin films
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Summary:The in-plane dielectric and microwave properties of Barium tin titanate Ba(Sn0.15Ti0.85)O3 (BTS) thin films grown on LaAlO3 (100) substrates through sol–gel process were investigated. X-ray diffraction was used to characterize the phase structural of the thin films. Microwave properties of the films were measured from 1 to 10 GHz by the interdigital capacitor method. A tunability of 16.13% was observed at the frequency of 5 GHz with an applied electric field of 80 kV/cm. The calculated dielectric constants for BTS films at 1, 5 and 10 GHz were 946, 930 and 952, respectively. This work clearly reveals the highly promising potential of BTS films for application in tunable microwave devices.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2007.08.006