GaN and ZnO freestanding micromechanical structures on silicon-on-insulator substrates

Using a combination of selective dry etching techniques, surface micro‐machined GaN and ZnO micromechanical structures are demonstrated on silicon‐on‐insulator (SOI) substrates. The dry releasing technique employs a controlled gas phase pulse etching with non‐plasma xenon difluoride (XeF2), which se...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2008-05, Vol.205 (5), p.1168-1172
Main Authors: Tripathy, S., Vicknesh, S., Wang, L. S., Lin, V. K. X., Oh, S. A., Grover, R., Zang, K. Y., Arokiaraj, J., Tan, J. N., Kumar, B., Gong, H., Shannigrahi, S. R., Ramam, A., Chua, S. J.
Format: Article
Language:English
Subjects:
62.20.−x
63.20.−e
78.30.Fs
81.05.Dz
81.05.Ea
85.85.+j
Applied sciences
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Materials
Materials science
Physics
Surface treatments
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Summary:Using a combination of selective dry etching techniques, surface micro‐machined GaN and ZnO micromechanical structures are demonstrated on silicon‐on‐insulator (SOI) substrates. The dry releasing technique employs a controlled gas phase pulse etching with non‐plasma xenon difluoride (XeF2), which selectively etches the Si overlayer of SOI, thus undercutting the wide bandgap semiconductor material on top. This method prevents crystal damage of overhanging wide bandgap semiconductor mechanical structures. The mechanical properties of these released microstructures are characterized by micro‐Raman spectroscopy. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6300
0031-8965
1862-6319
DOI:10.1002/pssa.200723611