Structural analysis of In/Ag, In/Cu and In/Pd thin films on tungsten by ellipsometric, XRD and AES methods

• Published in: Applied surface science 2008-05, Vol.254 (14), p.4401-4407
• Main Authors: Wronkowska, A.A., Wronkowski, A., Bukaluk, A., Trzcinski, M., Okulewicz, K., Skowroński, Ł.
• Format: Article
• Language: English
• Subjects: Auger electron spectroscopy; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Diffusion; interface formation; Exact sciences and technology; Interdiffusion; Intermetallic compounds; Metals and metallic alloys; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics; Scanning electron microscopy; Single-crystal and powder diffraction; Solid surfaces and solid-solid interfaces; Spectroscopic ellipsometry; Structure and morphology; thickness; Structure of solids and liquids; crystallography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; X-ray diffraction and scattering; X-ray diffractometry
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2008.01.006

Compositional, microstructural and optical properties of In/Cu, In/Ag and In/Pd thin films evaporated on W substrate in a vacuum were investigated by means of Auger electron spectroscopy, X-ray diffractometry, scanning electron microscopy, and spectroscopic ellipsometry methods. Thicknesses of deposited pure metal layers were adjusted to atomic concentration ratios In:Ag = 1:2, In:Cu = 2:1 and In:Pd = 3:1. Interdiffusion of metals and creation of intermetallic compounds AgIn 2, Ag 2In and CuIn 2were detected at room temperature. Phase transformation and changes in the surface morphology due to annealing of samples at 393 K for 60 min were revealed. Combined investigations indicated a layered structure of In/Ag films. A tendency of island-like structure formation was stronger for In/Cu and In/Pd films. The complex dielectric functions 〈 ϵ ˜ ( E ) 〉 = 〈 ϵ 1 ( E ) 〉 + i 〈 ϵ 2 ( E ) 〉 of In/Ag, In/Cu and In/Pd composite layers were determined from spectroellipsometric data.