Structure of the band tails in amorphousselenium

Transient photocurrent measurements on evaporated a-Se layers indicate the presence of two sets of discrete traps in the band tail region. The shallower traps, at EV+0.20 eV and EC-0.28 eV, are found to be electrically neutral, while the deeper ones at EV+0.38 eV and EC-0.53 eV are related to the ch...

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Bibliographic Details
Published in:Journal of physics. Condensed matter 2008-05, Vol.20 (21), p.215202 (4)-215202 (4)
Main Authors: Benkhedir, M L, Brinza, M, Adriaenssens, G J, Main, C
Format: Article
Language:English
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Summary:Transient photocurrent measurements on evaporated a-Se layers indicate the presence of two sets of discrete traps in the band tail region. The shallower traps, at EV+0.20 eV and EC-0.28 eV, are found to be electrically neutral, while the deeper ones at EV+0.38 eV and EC-0.53 eV are related to the charged negative-U centres of a-Se. The density of the discrete traps is of the same order of magnitude as the disorder-induced background density in the valence and conduction band tails, preventing the characterization of the a-Se tail-state densities by a simple functional form.
ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/20/21/215202