The formation and characterization of electrical contacts (Schottky and Ohmic) on gallium nitride nanowires

We report on the fabrication and characterization of Ti/Au Ohmic contacts to unintentionally doped gallium nitride (n-GaN) nanowires. The specific contact resistance and resistivity were determined to be ~1.1 X 10-5 +/- 5 X 10-6 Omega cm2 and ~6.9 X 10-3 +/- 3 X 10-4 Omega cm, respectively, with a d...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2008-05, Vol.41 (10), p.105103-105103 (5)
Main Authors: Hwang, Chanoh, Hyung, Jung-Hwan, Lee, Seung-Yong, Jang, Chan-Oh, Kim, Tae-Hong, Choi, Pyung, Lee, Sang-Kwon
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in multilayers, nanoscale materials and structures
Exact sciences and technology
Nanoscale contacts
Physics
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Summary:We report on the fabrication and characterization of Ti/Au Ohmic contacts to unintentionally doped gallium nitride (n-GaN) nanowires. The specific contact resistance and resistivity were determined to be ~1.1 X 10-5 +/- 5 X 10-6 Omega cm2 and ~6.9 X 10-3 +/- 3 X 10-4 Omega cm, respectively, with a diameter of ~140 nm using a transmission line model (TLM). We also present the electrical characterizations of metal/GaN nano-Schottky diodes with four Schottky metals (Al, Ti, Cr and Au) on unintentionally doped GaN nanowires using current-voltage (I-V) characteristics at room temperature. We observed the abnormal electrical characteristics of GaN nano-Schottky diodes for each Schottky metal.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/41/10/105103