Study of the electronic properties of GaAs-based atomic layer doped field effect transistor (ALD-FET) under the influence of hydrostatic pressure

Based on a Thomas–Fermi envelope function scheme we perform the calculation of the electronic structure of a GaAs atomic layer doped field effect transistors (ALD‐FET). We calculate the electronic structure for the device as a function of the involved parameters, in particular we study the effects o...

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Bibliographic Details
Published in:Physica Status Solidi (b) 2009-03, Vol.246 (3), p.581-585
Main Authors: Martínez-Orozco, J. C., Rodríguez-Vargas, I., Duque, C. A., Mora-Ramos, M. E., Gaggero-Sager, L. M.
Format: Article
Language:English
Subjects:
62.50.−p
73.21.−b
73.30.+y
73.61.Ey
85.30.Tv
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Summary:Based on a Thomas–Fermi envelope function scheme we perform the calculation of the electronic structure of a GaAs atomic layer doped field effect transistors (ALD‐FET). We calculate the electronic structure for the device as a function of the involved parameters, in particular we study the effects of the hydrostatic pressure onto the electronic level structure in order to investigate the formation of high conductivity electron channels in such devices. We consider the pressure‐induced Γ–X crossover within the conduction band as a possible effect causing the enhancement of the associated two‐dimensional carrier densities. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.200880530