Electron beam lithography of HSQ/PMMA bilayer resists for negative tone lift-off process

A HSQ/PMMA bilayer resist system, in which HSQ as negative tone electron beam resist top layer and PMMA as bottom layer, has been investigated for negative tone lift-off process. Patterns are first defined on the HSQ resist using electron beam lithography, and then transferred into the bottom PMMA l...

Full description

Saved in:
Bibliographic Details
Published in:Microelectronic engineering 2008-05, Vol.85 (5-6), p.814-817
Main Authors: Yang, Haifang, Jin, Aizi, Luo, Qiang, Li, Junjie, Gu, Changzhi, Cui, Zheng
Format: Article
Language:English
Subjects:
Applied sciences
Electron beam lithography
Electronics
Exact sciences and technology
HSQ/PMMA bilayer resist
Microelectronic fabrication (materials and surfaces technology)
Negative tone lift-off
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A HSQ/PMMA bilayer resist system, in which HSQ as negative tone electron beam resist top layer and PMMA as bottom layer, has been investigated for negative tone lift-off process. Patterns are first defined on the HSQ resist using electron beam lithography, and then transferred into the bottom PMMA layer using oxygen reactive ion etching. Electron beam exposure of HSQ on top of PMMA layer has been characterised, showing the PMMA underlayer has no effect on the exposure of HSQ. Optimum conditions for reactive ion etching of PMMA underlayer have been established. The undercut length in the PMMA layer is found near linearly dependence on etching time. Well defined undercut profile has been achieved in the HSQ/PMMA bilayer resist system, and good negative tone metal lift-off structures have been successfully produced.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2008.01.006