The wide band gap of highly oriented nanocrystalline Al doped ZnO thin films from sol–gel dip coating

Undoped and Al doped ZnO thin films were prepared on glass substrate by sol–gel dip coating from PVP-modified zinc acetate dihydrate and aluminium chloride hexahydrate solutions. The XRD patterns of all thin films indexed a highly preferential orientation along c-axis. The AFM images showed the aver...

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Bibliographic Details
Published in:Journal of alloys and compounds 2009-02, Vol.470 (1), p.408-412
Main Authors: Ratana, T., Amornpitoksuk, P., Suwanboon, S.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Materials science
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Nanostructured materials
Optical materials
Optical properties
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optics
Photonic bandgap materials
Physics
Sol–gel processes
Thin films
Zinc oxide
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Summary:Undoped and Al doped ZnO thin films were prepared on glass substrate by sol–gel dip coating from PVP-modified zinc acetate dihydrate and aluminium chloride hexahydrate solutions. The XRD patterns of all thin films indexed a highly preferential orientation along c-axis. The AFM images showed the average grain size of undoped ZnO thin film was about 101 nm whereas the smallest average grain size at 8 mol% Al was about 49 nm. The values of direct optical band gap of thin films varied in the range of 3.70–3.87 eV.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2008.02.081