Highly efficient class-F GaN HEMT Doherty amplifier for WCDMA applications

This article presents a high‐efficiency GaN HEMT class‐F Doherty amplifier for 2.14‐GHz WCDMA applications. From the measured results, the proposed amplifier shows the PAE and drain efficiency of 56.3 and 60.1% at 39.5 dBm (6‐dB back‐off power from Psat) for a single tone. For a one‐carrier WCDMA si...

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Bibliographic Details
Published in:Microwave and optical technology letters 2008-09, Vol.50 (9), p.2328-2331
Main Authors: Lee, Yong-Sub, Lee, Mun-Woo, Jeong, Yoon-Ha
Format: Article
Language:English
Subjects:
class-F
Doherty amplifier
efficiency
gallium nitride (GaN)
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Summary:This article presents a high‐efficiency GaN HEMT class‐F Doherty amplifier for 2.14‐GHz WCDMA applications. From the measured results, the proposed amplifier shows the PAE and drain efficiency of 56.3 and 60.1% at 39.5 dBm (6‐dB back‐off power from Psat) for a single tone. For a one‐carrier WCDMA signal, the CFDA shows the PAE of 44.9% with an ACLR of −22.1 dBc (±2.5 MHz offset) at 36.5 dBm, while an ACLR of −35.4 dBc with the PAE of 39.7% is achieved for the CEDA after linearity optimization. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2328–2331, 2008; Published online in Wiley InterScience (www.interscience.wiley.com).DOI 10.1002/mop.23700
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.23700