Investigation of As-doped ZnO films synthesized via thermal annealing of ZnSe/GaAs heterostructures

We synthesized ZnO films via oxidative annealing of ZnSe/GaAs heterostructures and investigated their structural and optical properties. Films were polycrystalline, c-axis oriented and exhibited superior optical properties. In addition, we detected nanometer-size As clusters into the ZnO film and a...

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Bibliographic Details
Published in:Journal of crystal growth 2008-06, Vol.310 (13), p.3149-3153
Main Authors: Maksimov, O., Liu, B.Z.
Format: Article
Language:English
Subjects:
A1. Auger electron spectroscopy
A1. p-Type doping
B1. ZnO
B2. Semiconducting II–VI materials
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:We synthesized ZnO films via oxidative annealing of ZnSe/GaAs heterostructures and investigated their structural and optical properties. Films were polycrystalline, c-axis oriented and exhibited superior optical properties. In addition, we detected nanometer-size As clusters into the ZnO film and a Ga x O y layer at the ZnO/GaAs interface. Formation of an interfacial layer can prevent use of this technique for p-type doping and complicates identification of the origin of p-type response in the annealed ZnO/GaAs heterostructures.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2008.03.027