Silicon carbide whiskers with superlattice structure: A precursor for a new type of nanoreactor

Silicon carbide whiskers exhibit growth predominantly in the 〈1 1 1〉 direction. The high level of impurities, stacking faults and nanosized twins govern the formation of homojunctions and heterojunctions in crystals. The structure of the whiskers comprises a hybrid superlattice, i.e. contains elemen...

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Bibliographic Details
Published in:Acta materialia 2008-06, Vol.56 (11), p.2450-2455
Main Author: Lutsenko, Vadym G.
Format: Article
Language:English
Subjects:
Applied sciences
Exact sciences and technology
Metals. Metallurgy
Nanocomposites
Nanocrystalline nanostructure
Nanomaterials
Nanoreactor
Nanostructure
Planes
Porous materials
Quantum wells
Silicon carbide
Silicon carbide (SiC) whiskers
Stacking faults
Superlattice
Superlattices
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Summary:Silicon carbide whiskers exhibit growth predominantly in the 〈1 1 1〉 direction. The high level of impurities, stacking faults and nanosized twins govern the formation of homojunctions and heterojunctions in crystals. The structure of the whiskers comprises a hybrid superlattice, i.e. contains elements of doped and composite superlattices. An individual SiC whisker can contain hundreds of quantum wells with anomalous chemical properties. This paper shows that it is possible to selectively etch quantum wells and to construct whiskers with quasi-regularly distributed slit-like nanopores (nanoreactors), which are bordered by polar planes {1 1 1}, {0 0 0 1} or a combination of them, and also to produce flat SiC nanocrystals bordered by polar planes.
ISSN:1359-6454
1873-2453
DOI:10.1016/j.actamat.2008.01.033