Beryllium-doped single-crystal diamond grown by microwave plasma CVD

• Published in: Diamond and related materials 2009-02, Vol.18 (2), p.121-123
• Main Authors: Ueda, K., Kasu, M.
• Format: Article
• Language: English
• Subjects: Beryllium; Cathodoluminescence; Cathodoluminescence, ionoluminescence; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; CVD; Diamond; Doping; Exact sciences and technology; Fullerenes and related materials; diamonds, graphite; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other luminescence and radiative recombination; Physics; Specific materials; Theory and models of film growth
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/j.diamond.2008.10.009

We performed beryllium (Be) doping to diamond by inserting a solid Be-rod into the plasma ball during microwave plasma CVD growth. The Be concentration can be controlled in the range from ∼ 10 16 to ∼ 10 18 cm − 3 by changing the Be-rod insertion depth in the plasma ball and the microwave power. In cathodoluminescence (CL) spectra of Be-doped CVD films, we observed a peak at 4.760 eV and its phonon replica as well as free-exciton (FE)-related emissions. Peak energies of these emissions are close to those of Be-related emissions from Be-implanted diamond films.