Magnetic behavior of the II-V-diluted magnetic semiconductor Cd1-xMnxSb

• Published in: Journal of magnetism and magnetic materials 2009-04, Vol.321 (8), p.1072-1076
• Main Authors: HARRIS, J. L, SHAND, P. M, SHAPOVAL, L. V, VAN WAARDHUIZEN, A, STRAUSS, L. H
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Magnetic properties and materials; Magnetic semiconductors; Physics; Studies of specific magnetic materials
• ISSN: 0304-8853
• DOI: 10.1016/j.jmmm.2008.10.020

Polycrystalline samples of the II-V-diluted magnetic semiconductor Cd1-xMnxSb (x=0.05-0.20) were synthesized. Standard high temperature ceramic methods under an inert atmosphere were utilized for sample fabrication. Structural characterization was done using X-ray diffractometry (XRD), which indicated that a simple substitution of Mn for Cd is probably not occurring. Hysteresis, ac susceptibility, dc magnetization, and spontaneous magnetization measurements were performed for Cd0.90Mn0.10Sb. The hysteresis data indicated the presence of a ferromagnetic component. Ferromagnetism in the Cd0.90Mn0.10Sb system is likely due to two sources: Mn spins in small Mn-rich regions and a small amount of MnSb in a minority phase. Analysis of the spontaneous magnetization as a function of temperature for Cd0.90Mn0.10Sb yielded the value 0.172 for the critical exponent beta. In MnSb, beta was found to have the value 0.379, which is close to the theoretical value for 3D-Heisenberg systems. Thus, in Cd0.90Mn0.10Sb, the ferromagnetism is not of the 3D-Heisenberg type; rather, it is closer to 2D Ising behavior, indicating reduced effective dimensionality.