Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure

Silicon nitride (SiN X ) film fabrication on polyethylene terephthalate (PET) substrates has been achieved at a low temperature (∼100 °C) by plasma enhanced chemical vapor deposition operated at near atmospheric pressures. A short-pulse based power system was employed to maintain a stable discharge...

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Bibliographic Details
Published in:Applied surface science 2008-07, Vol.254 (19), p.6208-6210
Main Authors: Matsumoto, M., Inayoshi, Y., Suemitsu, M., Miyamoto, E., Yara, T., Nakajima, S., Uehara, T., Toyoshima, Y.
Format: Article
Language:English
Subjects:
Atmospheric pressure
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
PECVD
Physics
Polyethylene terephthalate
Silicon nitride
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Summary:Silicon nitride (SiN X ) film fabrication on polyethylene terephthalate (PET) substrates has been achieved at a low temperature (∼100 °C) by plasma enhanced chemical vapor deposition operated at near atmospheric pressures. A short-pulse based power system was employed to maintain a stable discharge of SiH 4, H 2 and N 2 in near atmospheric pressures without the use of any inert gases such as He. The deposited films were characterized by X-ray photoelectron spectroscopy. Cross sections of the films were observed by scanning electron microscope (SEM). Despite the use of N 2 in place of NH 3, a high deposition rate (290 nm/min) was obtained by this near-atmospheric-pressure plasma.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2008.02.186