A nanoanalytical investigation of high- k dielectric gate stacks for GaAs based MOSFET devices

In this paper a quantitative determination of the elemental distributions across a ∼10 nm Ga 2O 3/GdGaO layer with a Pt metal gate cap on top of an InGaAs/AlGaAs/GaAs substrate is presented. Some effects of annealing on the elemental distribution across the Ga 2O 3/GdGaO oxide layer are described. T...

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Bibliographic Details
Published in:Microelectronic engineering 2009-03, Vol.86 (3), p.214-217
Main Authors: Longo, P., Craven, A.J., Holland, M.C., Moran, D.A.J., Thayne, I.G.
Format: Article
Language:English
Subjects:
Annealing effects
Applied sciences
EELS spectrum imaging
Electronics
Exact sciences and technology
Ga and Gd mixed dielectric oxide layers
GaAs based MOSFET devices
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
STEM imaging compositional analysis
TEM analysis
Transistors
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Summary:In this paper a quantitative determination of the elemental distributions across a ∼10 nm Ga 2O 3/GdGaO layer with a Pt metal gate cap on top of an InGaAs/AlGaAs/GaAs substrate is presented. Some effects of annealing on the elemental distribution across the Ga 2O 3/GdGaO oxide layer are described. The paper also discusses the analysis of the interface GaAs/Ga 2O 3/GGO at a sub-nm level by high-resolution HAADF STEM imaging.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2008.08.013