Optical and electrical characteristics of GaAs/InGaAs quantum-well device

• Published in: Journal of alloys and compounds 2009-03, Vol.471 (1), p.567-569
• Main Authors: Hsu, K.C., Ho, C.H., Lin, Y.S., Wu, Y.H., Hsu, R.T., Huang, K.W.
• Format: Article
• Language: English
• Subjects: 2DEG; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in multilayers, nanoscale materials and structures; Exact sciences and technology; HEMT; LP-MOCVD; Mobility; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; Physics; Quantum wells
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2008.04.089

A GaAs/InGaAs quantum-well structure was grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The quantum well was graded from 25% to 15% indium (from the bottom to the top of the channel). Hall measurements were made to characterize the concentration and mobility of the two-dimensional electron gas (2DEG). The temperature-dependent photoluminescence (PL) and photoreflectance (PR) spectra of the structure of interest were obtained. Various intersuband features were observed in the PR spectra. Furthermore, a 1.5 μm gate-length high-electron mobility transistor (HEMT), fabricated on these layers, had an extrinsic transconductance of 127 mS/mm. The optical and electrical characteristics were determined simultaneously.