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Interface control of high- k gate dielectrics on Ge

Important progress has been made in the passivation of Ge/gate dielectric interfaces. One important approach is by thermally oxidized GeO 2 interface and ALD high- k layers, with an interface state density D it ∼ 2 × 10 11 cm −2 eV −1. Another approach is with an epi-Si/SiO 2 interface, resulting in...

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Bibliographic Details
Published in:Applied surface science 2008-07, Vol.254 (19), p.6094-6099
Main Authors: Caymax, M., Houssa, M., Pourtois, G., Bellenger, F., Martens, K., Delabie, A., Van Elshocht, S.
Format: Article
Language:English
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Summary:Important progress has been made in the passivation of Ge/gate dielectric interfaces. One important approach is by thermally oxidized GeO 2 interface and ALD high- k layers, with an interface state density D it ∼ 2 × 10 11 cm −2 eV −1. Another approach is with an epi-Si/SiO 2 interface, resulting in similar D it. Hysteresis and V th shift, however, are still not optimal. Extensive material characterization and theoretical insights help us understanding the root cause of these remaining issues and show the way to improved interface control.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2008.02.134