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Interface control of high- k gate dielectrics on Ge
Important progress has been made in the passivation of Ge/gate dielectric interfaces. One important approach is by thermally oxidized GeO 2 interface and ALD high- k layers, with an interface state density D it ∼ 2 × 10 11 cm −2 eV −1. Another approach is with an epi-Si/SiO 2 interface, resulting in...
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Published in: | Applied surface science 2008-07, Vol.254 (19), p.6094-6099 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Important progress has been made in the passivation of Ge/gate dielectric interfaces. One important approach is by thermally oxidized GeO
2 interface and ALD high-
k layers, with an interface state density
D
it
∼
2
×
10
11
cm
−2
eV
−1. Another approach is with an epi-Si/SiO
2 interface, resulting in similar
D
it. Hysteresis and
V
th shift, however, are still not optimal. Extensive material characterization and theoretical insights help us understanding the root cause of these remaining issues and show the way to improved interface control. |
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ISSN: | 0169-4332 1873-5584 |
DOI: | 10.1016/j.apsusc.2008.02.134 |