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Characterizations of single-phased cubic Mg0.5Zn0.5O prepared at high pressure and high temperature

We report the preparation of a single-phased cubic Mg0.5Zn0.5O semiconductor at high pressure and high temperature(HPHT) in this paper. Phase separation that was frequently observed in Mg0.5Zn0.5O alloys at a normal pressure was avoided in our case. The formation of the single-phased Mg0.5Zn0.5O res...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2008-08, Vol.41 (15), p.155408-155408 (4)
Main Authors: Qin, J M, Yao, B, Jia, X P, Shan, C X, Zhang, J Y, Ma, H A, Shen, D Z
Format: Article
Language:English
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Summary:We report the preparation of a single-phased cubic Mg0.5Zn0.5O semiconductor at high pressure and high temperature(HPHT) in this paper. Phase separation that was frequently observed in Mg0.5Zn0.5O alloys at a normal pressure was avoided in our case. The formation of the single-phased Mg0.5Zn0.5O resulted from the HPHT applied during the preparation process. The Mg0.5Zn0.5O has a maximum absorption at about 265 nm and a sharp absorption edge at about 300 nm. The single-phased Mg0.5Zn0.5O with an abrupt absorption edge obtained in this paper is of significance in realizing high-performance ultraviolet photodetectors based on MgZnO.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/41/15/155408