Channel mobility evaluation for diamond MOSFETs using gate-to-channel capacitance measurement

In this work, the channel mobility ( μ ch) of diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with hole accumulation layer channels was evaluated from the gate-to-channel capacitance and drain conductance for the first time. The FET structure was utilized for the capacitance–vol...

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Bibliographic Details
Published in:Diamond and related materials 2008-07, Vol.17 (7), p.1256-1258
Main Authors: Hirama, K., Takayanagi, H., Yamauchi, S., Yang, J.H., Umezawa, H., Kawarada, H.
Format: Article
Language:English
Subjects:
Applied sciences
Cross-disciplinary physics: materials science
rheology
C–V measurement
Diamond
Electronics
Exact sciences and technology
Fullerenes and related materials
diamonds, graphite
Materials science
Mobility
MOSFET
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Specific materials
Transistors
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Summary:In this work, the channel mobility ( μ ch) of diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with hole accumulation layer channels was evaluated from the gate-to-channel capacitance and drain conductance for the first time. The FET structure was utilized for the capacitance–voltage (C–V) measurement, and the gate-to-channel capacitance ( C GC) under the forward bias condition was proportional to the gate area, as in the case of Si MOSFETs. For the accurate evaluation of the drain conductance, diamond MOSFETs were fabricated on IIa-type diamond films with low boron concentrations (< 10 14cm − 3). In a 60-μm gate-length diamond MOSFET, a μ ch of 145cm 2/Vs was obtained, which is comparable to that of a SiC inversion layer.
ISSN:0925-9635
1879-0062
DOI:10.1016/j.diamond.2008.02.031