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Channel mobility evaluation for diamond MOSFETs using gate-to-channel capacitance measurement
In this work, the channel mobility ( μ ch) of diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with hole accumulation layer channels was evaluated from the gate-to-channel capacitance and drain conductance for the first time. The FET structure was utilized for the capacitance–vol...
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| Published in: | Diamond and related materials 2008-07, Vol.17 (7), p.1256-1258 |
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| Main Authors: | , , , , , |
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| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c370t-22909fd5f03ae66132a358d5cd007bbff176e5d920283f2b354a18635c18b3403 |
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| cites | cdi_FETCH-LOGICAL-c370t-22909fd5f03ae66132a358d5cd007bbff176e5d920283f2b354a18635c18b3403 |
| container_end_page | 1258 |
| container_issue | 7 |
| container_start_page | 1256 |
| container_title | Diamond and related materials |
| container_volume | 17 |
| creator | Hirama, K. Takayanagi, H. Yamauchi, S. Yang, J.H. Umezawa, H. Kawarada, H. |
| description | In this work, the channel mobility (
μ
ch) of diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with hole accumulation layer channels was evaluated from the gate-to-channel capacitance and drain conductance for the first time. The FET structure was utilized for the capacitance–voltage (C–V) measurement, and the gate-to-channel capacitance (
C
GC) under the forward bias condition was proportional to the gate area, as in the case of Si MOSFETs. For the accurate evaluation of the drain conductance, diamond MOSFETs were fabricated on IIa-type diamond films with low boron concentrations (< 10
14cm
− 3). In a 60-μm gate-length diamond MOSFET, a
μ
ch of 145cm
2/Vs was obtained, which is comparable to that of a SiC inversion layer. |
| doi_str_mv | 10.1016/j.diamond.2008.02.031 |
| format | article |
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μ
ch) of diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with hole accumulation layer channels was evaluated from the gate-to-channel capacitance and drain conductance for the first time. The FET structure was utilized for the capacitance–voltage (C–V) measurement, and the gate-to-channel capacitance (
C
GC) under the forward bias condition was proportional to the gate area, as in the case of Si MOSFETs. For the accurate evaluation of the drain conductance, diamond MOSFETs were fabricated on IIa-type diamond films with low boron concentrations (< 10
14cm
− 3). In a 60-μm gate-length diamond MOSFET, a
μ
ch of 145cm
2/Vs was obtained, which is comparable to that of a SiC inversion layer.</description><identifier>ISSN: 0925-9635</identifier><identifier>EISSN: 1879-0062</identifier><identifier>DOI: 10.1016/j.diamond.2008.02.031</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Cross-disciplinary physics: materials science; rheology ; C–V measurement ; Diamond ; Electronics ; Exact sciences and technology ; Fullerenes and related materials; diamonds, graphite ; Materials science ; Mobility ; MOSFET ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Specific materials ; Transistors</subject><ispartof>Diamond and related materials, 2008-07, Vol.17 (7), p.1256-1258</ispartof><rights>2008 Elsevier B.V.</rights><rights>2008 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c370t-22909fd5f03ae66132a358d5cd007bbff176e5d920283f2b354a18635c18b3403</citedby><cites>FETCH-LOGICAL-c370t-22909fd5f03ae66132a358d5cd007bbff176e5d920283f2b354a18635c18b3403</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,780,784,789,790,23930,23931,25140,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20664042$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Hirama, K.</creatorcontrib><creatorcontrib>Takayanagi, H.</creatorcontrib><creatorcontrib>Yamauchi, S.</creatorcontrib><creatorcontrib>Yang, J.H.</creatorcontrib><creatorcontrib>Umezawa, H.</creatorcontrib><creatorcontrib>Kawarada, H.</creatorcontrib><title>Channel mobility evaluation for diamond MOSFETs using gate-to-channel capacitance measurement</title><title>Diamond and related materials</title><description>In this work, the channel mobility (
μ
ch) of diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with hole accumulation layer channels was evaluated from the gate-to-channel capacitance and drain conductance for the first time. The FET structure was utilized for the capacitance–voltage (C–V) measurement, and the gate-to-channel capacitance (
C
GC) under the forward bias condition was proportional to the gate area, as in the case of Si MOSFETs. For the accurate evaluation of the drain conductance, diamond MOSFETs were fabricated on IIa-type diamond films with low boron concentrations (< 10
14cm
− 3). In a 60-μm gate-length diamond MOSFET, a
μ
ch of 145cm
2/Vs was obtained, which is comparable to that of a SiC inversion layer.</description><subject>Applied sciences</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>C–V measurement</subject><subject>Diamond</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fullerenes and related materials; diamonds, graphite</subject><subject>Materials science</subject><subject>Mobility</subject><subject>MOSFET</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Specific materials</subject><subject>Transistors</subject><issn>0925-9635</issn><issn>1879-0062</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqFkE1r3DAURUVpINOkPyHgTbuz8yT5c1XK0CSFlCyaLIt4lp-mGmxrKskD-ffRMKbbrN7m3vs4h7EbDgUHXt_ui8Hi5OahEABtAaIAyT-wDW-bLgeoxUe2gU5UeVfL6pJ9CmEPwEVX8g37s_2L80xjNrnejja-ZnTEccFo3ZwZ57N1Ovv19Pvux3PIlmDnXbbDSHl0uV7bGg-obcRZUzYRhsXTRHO8ZhcGx0Cf13vFXtLI9iF_fLr_uf3-mGvZQMyF6KAzQ2VAItU1lwJl1Q6VHgCavjeGNzVVQydAtNKIXlYl8jbBaN72sgR5xb6edw_e_VsoRDXZoGkccSa3BCVLDg0XPAWrc1B7F4Inow7eTuhfFQd1kqn2aiVWJ5kKhEoyU-_L-gCDxtH4RGrD_7KAui6hFCn37ZyjRHu05FXQlpKVwXrSUQ3OvvPpDT5QjQc</recordid><startdate>20080701</startdate><enddate>20080701</enddate><creator>Hirama, K.</creator><creator>Takayanagi, H.</creator><creator>Yamauchi, S.</creator><creator>Yang, J.H.</creator><creator>Umezawa, H.</creator><creator>Kawarada, H.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20080701</creationdate><title>Channel mobility evaluation for diamond MOSFETs using gate-to-channel capacitance measurement</title><author>Hirama, K. ; Takayanagi, H. ; Yamauchi, S. ; Yang, J.H. ; Umezawa, H. ; Kawarada, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c370t-22909fd5f03ae66132a358d5cd007bbff176e5d920283f2b354a18635c18b3403</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Applied sciences</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>C–V measurement</topic><topic>Diamond</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Fullerenes and related materials; diamonds, graphite</topic><topic>Materials science</topic><topic>Mobility</topic><topic>MOSFET</topic><topic>Physics</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Specific materials</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hirama, K.</creatorcontrib><creatorcontrib>Takayanagi, H.</creatorcontrib><creatorcontrib>Yamauchi, S.</creatorcontrib><creatorcontrib>Yang, J.H.</creatorcontrib><creatorcontrib>Umezawa, H.</creatorcontrib><creatorcontrib>Kawarada, H.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Diamond and related materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hirama, K.</au><au>Takayanagi, H.</au><au>Yamauchi, S.</au><au>Yang, J.H.</au><au>Umezawa, H.</au><au>Kawarada, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Channel mobility evaluation for diamond MOSFETs using gate-to-channel capacitance measurement</atitle><jtitle>Diamond and related materials</jtitle><date>2008-07-01</date><risdate>2008</risdate><volume>17</volume><issue>7</issue><spage>1256</spage><epage>1258</epage><pages>1256-1258</pages><issn>0925-9635</issn><eissn>1879-0062</eissn><abstract>In this work, the channel mobility (
μ
ch) of diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with hole accumulation layer channels was evaluated from the gate-to-channel capacitance and drain conductance for the first time. The FET structure was utilized for the capacitance–voltage (C–V) measurement, and the gate-to-channel capacitance (
C
GC) under the forward bias condition was proportional to the gate area, as in the case of Si MOSFETs. For the accurate evaluation of the drain conductance, diamond MOSFETs were fabricated on IIa-type diamond films with low boron concentrations (< 10
14cm
− 3). In a 60-μm gate-length diamond MOSFET, a
μ
ch of 145cm
2/Vs was obtained, which is comparable to that of a SiC inversion layer.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.diamond.2008.02.031</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0925-9635 |
| ispartof | Diamond and related materials, 2008-07, Vol.17 (7), p.1256-1258 |
| issn | 0925-9635 1879-0062 |
| language | eng |
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| source | ScienceDirect Journals |
| subjects | Applied sciences Cross-disciplinary physics: materials science rheology C–V measurement Diamond Electronics Exact sciences and technology Fullerenes and related materials diamonds, graphite Materials science Mobility MOSFET Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Specific materials Transistors |
| title | Channel mobility evaluation for diamond MOSFETs using gate-to-channel capacitance measurement |
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