A 2.4 GHz highly linear image-rejection low noise amplifier by using an active inductor

This article presented a highly linear image‐rejection (IR) low‐noise amplifier (LNA) for 2.4 GHz band applications based on 0.18 μm CMOS technology. By using folded PMOS for sinking the third‐order intermodulation distortion (IMD3), the IR LNA has high input third‐order intercept point (IIP3) at 2....

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Bibliographic Details
Published in:Microwave and optical technology letters 2009-06, Vol.51 (6), p.1570-1573
Main Authors: Li, Jain-Yi, Chang, Chin-Sheng, Lin, Wen-Jeng, Chen, Han-Jan, Chen, Lih-Shan, Houng, Mau-Phon
Format: Article
Language:English
Subjects:
active inductor
high linear
image-rejection
low noise amplifier
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Summary:This article presented a highly linear image‐rejection (IR) low‐noise amplifier (LNA) for 2.4 GHz band applications based on 0.18 μm CMOS technology. By using folded PMOS for sinking the third‐order intermodulation distortion (IMD3), the IR LNA has high input third‐order intercept point (IIP3) at 2.4 GHz. The IR filter, using a high quality factor (Q) active inductor, has 30 dB rejection for 1.6 GHz image band with intermediate frequency of 400 MHz. An IIP3 of +10 dBm was obtained with a gain of 16.8 dB, noise figure (NF) of 2.5 dB, and power consumption of 12 mW. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1570–1573, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24381
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.24381