Control of thick single crystal erbium oxide growth on (1 1 1) silicon

• Published in: Journal of crystal growth 2009-03, Vol.311 (7), p.2199-2204
• Main Authors: Smith, R.S., Sewell, R.H., Clark, A., Atanackovic, P.
• Format: Article
• Language: English
• Subjects: A1. Crystal structures; A3. Molecular beam epitaxy; B1. Oxides; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; Structure of solids and liquids; crystallography; Structure of specific crystalline solids; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2008.10.104

Single crystal erbium oxide films up to 150 nm thick were grown directly on Si (1 1 1) substrates by molecular beam epitaxy (MBE). The formation of erbium silicide interfacial phases was successfully suppressed by control over critical growth parameters. Wafers were characterized by in situ optical reflectometry and post-growth X-ray diffraction, ellipsometry, photoluminescence mapping and electron microscopy. By correlating these results we have established MBE growth protocols such that silicide formation can be detected immediately during growth, thereby enabling a more production-oriented approach to growth of erbium oxide films.