Acoustic Emission, Electroluminescence Intensity Surface Distribution and Light Fluctuations Correlation in GaAsP/GaP and InGaN/GaN structures

In work it is shown, that in the GaAsP/GaP and InGaN/GaN heterostructures at current passage simultaneously with operation of acoustic emission sources take place a redistribution of electroluminescence (EL) intensity on a structure surface, are observed local (on areas of surface) and integrated fl...

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Bibliographic Details
Main Authors: Veleschuk, Vitaliy P, Vlasenko, Olexander I, Lyashenko, Oleg V, Kysselyuk, Maxim P
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:In work it is shown, that in the GaAsP/GaP and InGaN/GaN heterostructures at current passage simultaneously with operation of acoustic emission sources take place a redistribution of electroluminescence (EL) intensity on a structure surface, are observed local (on areas of surface) and integrated fluctuations of EL intensity and current.
ISSN:0094-243X
DOI:10.1063/1.3140482