Effect of surface roughness on multilayer film growth

• Published in: The European physical journal. ST, Special topics Special topics, 2009-02, Vol.167 (1), p.27-32
• Main Authors: Modi, M. H., Rai, S. K., Thomasset, M., Lodha, G. S., Idir, M.
• Format: Article
• Language: English
• Subjects: Atomic; Classical and Continuum Physics; Condensed Matter Physics; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electron, ion, and scanning probe microscopy; Exact sciences and technology; Materials Science; Measurement Science and Instrumentation; Methods of deposition of films and coatings; film growth and epitaxy; Molecular; Optical and Plasma Physics; Physics; Physics and Astronomy; Regular Article; Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc; Structure and morphology; thickness; Structure of solids and liquids; crystallography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Theory and models of film growth; Thin film structure and morphology
• ISSN: 1951-6355; 1951-6401
• DOI: 10.1140/epjst/e2009-00932-9

NbC/Si multilayers grown on silicon substrates of different roughness have been used to study the influence of surface quality on growth characteristics. Surface morphology of substrate and multilayer film are characterized by topographic measurements using atomic force microscopy (AFM) technique and power spectral density analysis (PSD). Grazing incidence x-ray reflectivity (GIXR) technique in combination with PSD analysis reveals a growth characteristic of multilayer film on substrates of different roughness. It is revealed that the stochastic growth of NbC on rough substrate leads to formation of clusters of varying size depending on initial substrate roughness. Details of growth characteristic are discussed.