Microwave dielectric properties of SiC(B) solid solution powder prepared by sol–gel

B-doped SiC powders were synthesized at different temperatures by sol–gel. Results show that C-enriched β-SiC is generated completely when the temperature is 1700 °C and SiC(B) solid solution is generated when the temperature is 1800 °C. The electric permittivities of SiC samples were determined in...

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Bibliographic Details
Published in:Journal of alloys and compounds 2009-05, Vol.475 (1), p.506-509
Main Authors: Li, Zhimin, Zhou, Wancheng, Lei, Tianmin, Luo, Fa, Huang, Yunxia, Cao, Quanxi
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Dielectric loss and relaxation
Dielectric properties
Dielectric properties of solids and liquids
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Exact sciences and technology
Permittivity (dielectric function)
Physics
Point defects
SiC(B) solid solution
Sol–gel processes
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Summary:B-doped SiC powders were synthesized at different temperatures by sol–gel. Results show that C-enriched β-SiC is generated completely when the temperature is 1700 °C and SiC(B) solid solution is generated when the temperature is 1800 °C. The electric permittivities of SiC samples were determined in the frequency range of 8.2–12.4 GHz. Results show that the SiC(B) sample has higher values in real part ɛ′ and imaginary part ɛ″ of permittivity. The mechanism of dielectric loss by doping has been discussed.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2008.07.070