A low power low noise amplifier with subthreshold operation in 130 nm CMOS technology

In this article, a 5.8 GHz ISM‐band CMOS low noise amplifier (LNA) operating in a subthreshold region is presented. A conventional source degeneration inductor is eliminated for higher signal gain while providing reasonable input impedance. The LNA is fabricated using 130 nm CMOS technology and meas...

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Bibliographic Details
Published in:Microwave and optical technology letters 2008-11, Vol.50 (11), p.2762-2764
Main Authors: Song, Ickhyun, Jhon, Hee-Sauk, Jung, Hakchul, Koo, Minsuk, Shin, Hyungcheol
Format: Article
Language:English
Subjects:
CMOS
figure of merit
low noise amplifier
low power
subthreshold
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Summary:In this article, a 5.8 GHz ISM‐band CMOS low noise amplifier (LNA) operating in a subthreshold region is presented. A conventional source degeneration inductor is eliminated for higher signal gain while providing reasonable input impedance. The LNA is fabricated using 130 nm CMOS technology and measured signal gain, noise figure, and power consumption are 13.4 dB, 5.2 dB, and 980 μW, respectively, at target frequency. Also the LNA achieves the highest figure of merit among the recently published subthreshold LNAs. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2762–2764, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23788
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.23788